This resulted in the lowered work perform as well as the formation of the Schottky Speak to between the BrGO and n-kind Si substrate. On account of the upper proportion of B-C and B-C3 bonding while in the BrGO/Si device than that within the rGO/Si, the decreased Schottky barrier top https://www.directivepublications.org/journal-of-applied-nanoscience/